BSS306NH6327XTSA1 vs BSS806NH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS306NH6327XTSA1 dari Infineon dan BSS806NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS306NH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS306NH6327XTSA1 | — |
| Part Family | BSS306N (OptiMOS Small Signal) | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 2 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 20 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| RDS(on) max | [DATA_NEEDED: exact RDS(on) max value in mΩ] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max in V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) in V] | — |
| Paket | SOT-23 (PG-SOT23), 3-pin | PG-SOT23-3 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55°C to +150°C (TJ) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Lead Plating | Pb-free (RoHS compliant) | — |
| Configuration | Single N-Channel, 3-pin | — |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on) max) | — | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| Rentang Suhu Kerja | — | -55 C to +150 C (junction) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant (Pb-free plating) |
| Automotive Qualification | — | AEC-Q101 qualified |