BSS306NH6327XTSA1 vs BSS806NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS306NH6327XTSA1 disebabkan oleh Infineon dan BSS806NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS306NH6327XTSA1 BSS806NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 20 V
Continuous Drain Current (ID) 2.3 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
Kemasan SOT-23 (PG-SOT23), 3-pin PG-SOT23-3 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) —
Lead Plating Pb-free (RoHS compliant) —
Configuration Single N-Channel, 3-pin —
Continuous Drain Current (ID, Ta) — 2.3 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on) max) — 57 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.8 V rated (logic level)
Gate Drive (recommended VGS) — 1.8 V to 10 V
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Power Dissipation (PD, Ta) — 500 mW
Gambaran Suhu Operasi — -55 C to +150 C (junction)
Aras MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant (Pb-free plating)
Automotive Qualification — AEC-Q101 qualified

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga