BSS308PEH6327XTSA1 vs BSS83PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan BSS83PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSS308PEH6327XTSA1 | BSS83PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Tipe Transistor | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -30 V | -60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Paket / Case | PG-SOT23 (SOT-23-3) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Qualification | AEC-Q101 Automotive | Automotive grade per Infineon |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| FET Type | — | P-Channel |
| Technology | — | MOSFET (Metal-Oxide Semiconductor) |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Paket | — | PG-SOT23 (SOT-23-3) |
| Process Technology | — | SIPMOS / OptiMOS |