BSS308PEH6327XTSA1 vs BSS83PH6327XTSA1 比較
詳細並排比較 BSS308PEH6327XTSA1 由 Infineon 與 BSS83PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ 啟用中規格比較
| 參數 | BSS308PEH6327XTSA1 | BSS83PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| 電晶體類型 | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -30 V | -60 V |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| 工作溫度範圍 | -55 °C to +150 °C | — |
| 封裝 / 外殼 | PG-SOT23 (SOT-23-3) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| Qualification | AEC-Q101 Automotive | Automotive grade per Infineon |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| FET Type | — | P-Channel |
| Technology | — | MOSFET (Metal-Oxide Semiconductor) |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| 工作接面溫度 | — | -55 C to +150 C |
| 封裝 | — | PG-SOT23 (SOT-23-3) |
| Process Technology | — | SIPMOS / OptiMOS |