BSS316NH6327XTSA1 vs IRLML6346TRPBF Perbandingan

Perbandingan bersamaan detil BSS316NH6327XTSA1 dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS316NH6327XTSA1 IRLML6346TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS 2 (Trench) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket PG-SOT23 (SOT-23-3) Micro3 / SOT-23
Tipe Mounting Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) —
Level MSL MSL1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 qualified —
Polarity — N-Channel
Continuous Drain Current (ID) — 3.4 A (TA=25C)
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Suhu Hubung Kerja — -55C to +150C
Lead-Free Finish — Yes (PBF suffix)

Spek dan Sumber

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