BSS316NH6327XTSA1 vs IRLML6346TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS316NH6327XTSA1 disebabkan oleh Infineon dan IRLML6346TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS316NH6327XTSA1 IRLML6346TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS 2 (Trench) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-SOT23 (SOT-23-3) Micro3 / SOT-23
Jenis Pemasangan Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) —
Aras MSL MSL1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 qualified —
Polarity — N-Channel
Continuous Drain Current (ID) — 3.4 A (TA=25C)
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Suhu Hubungan Operasi — -55C to +150C
Lead-Free Finish — Yes (PBF suffix)

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