BSS606NH6327XTSA1 vs BSS214NWH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS606NH6327XTSA1 dari Infineon dan BSS214NWH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS606NH6327XTSA1 BSS214NWH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS Small Signal/Power —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 3.2 A (Ta) —
Power Dissipation (PD) 1 W (Ta) —
On-Resistance (RDS(on)) 60 mΩ max @ VGS=10 V —
Paket PG-SOT-89 (TO-243AA) PG-SOT323 (SOT-323-3)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Suhu Hubung Kerja -55°C to +150°C —
Qualification Automotive (per family page) AEC-Q101 (Automotive)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL 1 (per SOT-89 family standard) —
Reel Quantity 1000 pcs —
Part Number — BSS214NWH6327XTSA1
Series — OptiMOS
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) @ 25C — 1.5 A
Rds(on) Max @ Vgs=4.5V — 250 mOhm
Drive Voltage (Max Rds On, Min Rds On) — 2.5 V, 4.5 V
Power Dissipation (Pd) @ Ta=25C — 500 mW
Suhu Kerja — -55C to +150C (junction)

Spek dan Sumber

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