BSS806NH6327XTSA1 vs BSS306NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS806NH6327XTSA1 dari Infineon dan BSS306NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS806NH6327XTSA1 BSS306NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 2 (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 20 V 30 V
Continuous Drain Current (ID, Ta) 2.3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on) max) 57 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.8 V rated (logic level) —
Gate Drive (recommended VGS) 1.8 V to 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissipation (PD, Ta) 500 mW —
Rentang Suhu Kerja -55 C to +150 C (junction) —
Paket PG-SOT23-3 (SOT-23-3) SOT-23 (PG-SOT23), 3-pin
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant (Pb-free plating) —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) in V]
Suhu Kerja — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Lead Plating — Pb-free (RoHS compliant)
Configuration — Single N-Channel, 3-pin

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