BSS806NH6327XTSA1 vs BSS306NH6327XTSA1 比較

詳細並排比較 BSS806NH6327XTSA1 由 Infineon 與 BSS306NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS806NH6327XTSA1 BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon

BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon

BSS806NH6327XTSA1 ✓ 啟用中
Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS806NH6327XTSA1 BSS306NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology OptiMOS 2 (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 20 V 30 V
Continuous Drain Current (ID, Ta) 2.3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on) max) 57 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.8 V rated (logic level) —
Gate Drive (recommended VGS) 1.8 V to 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissipation (PD, Ta) 500 mW —
工作溫度範圍 -55 C to +150 C (junction) —
封裝 PG-SOT23-3 (SOT-23-3) SOT-23 (PG-SOT23), 3-pin
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant (Pb-free plating) —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) in V]
工作溫度 — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Lead Plating — Pb-free (RoHS compliant)
Configuration — Single N-Channel, 3-pin

資料表與資源

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