BSS87H6327FTSA1 vs BSP92PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSP92PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS87H6327FTSA1 BSP92PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) 260 mA (Ta) -260 mA (Ta)
Power Dissipation (PD) 1 W (Ta) 1.8 W (Ta)
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Paket PG-SOT89-4-2 (SOT-89) PG-SOT223-4 (SOT-223-4)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Jumlah Pin 3 (Gate / Drain / Source) 4 (Gate, Drain, Drain, Source)
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Lead-Free / Pb-Free Yes (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Tipe Transistor — P-Channel Enhancement Mode MOSFET
Channel Polarity — P-Channel
Suhu Kerja — -55C to +150C (Tj)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant

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