BSS87H6327FTSA1 vs BSP92PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS87H6327FTSA1 disebabkan oleh Infineon dan BSP92PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS87H6327FTSA1 BSP92PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V -250 V
Continuous Drain Current (ID) 260 mA (Ta) -260 mA (Ta)
Power Dissipation (PD) 1 W (Ta) 1.8 W (Ta)
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Kemasan PG-SOT89-4-2 (SOT-89) PG-SOT223-4 (SOT-223-4)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Kiraan Pin 3 (Gate / Drain / Source) 4 (Gate, Drain, Drain, Source)
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Lead-Free / Pb-Free Yes (Pb-free plating) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Jenis Transistor — P-Channel Enhancement Mode MOSFET
Channel Polarity — P-Channel
Suhu Operasi — -55C to +150C (Tj)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant

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