BSZ011NE2LS5IATMA1 vs BSC052N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ011NE2LS5IATMA1 dari Infineon dan BSC052N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ011NE2LS5IATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Rentang Suhu Kerja | -55°C to +150°C | — |
| Paket | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC052N08NS5ATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Suhu Hubung Kerja | — | -55C to +150C |