BSZ031NE2LS5ATMA1 vs BSC016N06NSTATMA1 Perbandingan
Perbandingan bersamaan detil BSZ031NE2LS5ATMA1 dari Infineon dan BSC016N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ031NE2LS5ATMA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 | BSC016N06NSTATMA1 |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| Suhu Hubung Kerja | -55 C to +150 C | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | — | 1.6 mOhm |
| Power Dissipation (Tc) | — | 167 W |
| Power Dissipation (Ta) | — | 3 W |
| Rentang Suhu Kerja | — | -55 C to +150 C |
| Series | — | OptiMOS |