BSZ031NE2LS5ATMA1 vs BSC016N06NSTATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ031NE2LS5ATMA1 sa pamamagitan ng Infineon at BSC016N06NSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ031NE2LS5ATMA1 BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon

BSZ031NE2LS5ATMA1 ✓ Nakahanda
Infineon
BSC016N06NSTATMA1 BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ031NE2LS5ATMA1 BSC016N06NSTATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ031NE2LS5ATMA1 BSC016N06NSTATMA1
Technology / Platform OptiMOS 5 25V/30V N-channel trench MOSFET —
Drain-Source Voltage (VDS) max 25 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta=25C 19 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max @ VGS=10 V 3.1 mOhm —
RDS(on) typical @ VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 30 W —
Temperature ng Junction na Operasyon -55 C to +150 C —
Packhaging PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL] [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Wala sa Halogen Yes —
FET Type — N-Channel
Technology — OptiMOS 5
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Hanay ng Temperature na Operasyon — -55 C to +150 C
Series — OptiMOS

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita