BSZ130N03LSGATMA1 vs BSZ150N10LS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSZ130N03LSGATMA1 dari Infineon dan BSZ150N10LS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ130N03LSGATMA1 BSZ150N10LS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
Arus Alir Berlanjut (TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 25 W —
Paket PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) —
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL moisture sensitivity level]
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes —
Qualification Industrial / Commercial (non-automotive) —
Part Number — BSZ150N10LS3GATMA1
Technology / Family — OptiMOS 3
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25 °C) — 40 A
On-Resistance RDS(on) max — 15 mΩ
Power Dissipation (TA=25 °C) — 2.1 W
Dissipasi Listrik (TC=25°C) — 63 W
Operating Temperature Range (TJ) — -55 °C to +150 °C
Gate Threshold VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow — Yes (lead-free, 260 °C peak reflow compatible)

Spek dan Sumber

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