BSZ15DC02KDHXTMA1 vs BSZ180P03NS3EGATMA1 Perbandingan

Perbandingan bersamaan detil BSZ15DC02KDHXTMA1 dari Infineon dan BSZ180P03NS3EGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ15DC02KDHXTMA1 BSZ180P03NS3EGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSZ15DC02KDHXTMA1 —
Tipe Transistor N-Channel + P-Channel (complementary pair) P-Channel MOSFET
Technology OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) OptiMOS P3
Drain-to-Source Voltage (VDS) Max 20 V —
N-Channel Continuous Drain Current (ID) 5.1 A —
P-Channel Continuous Drain Current (ID) 3.2 A —
N-Channel RDS(on) Max [DATA_NEEDED: N-ch RDS(on) value in mohm] —
P-Channel RDS(on) Max 55 mOhm (per Infineon part summary) —
Gate Drive Level Super Logic level, 2.5 V rated —
Configuration Common drain (back-to-back source pair) —
Total Package Power Dissipation (PD) 2.5 W @ 25 C (per DigiKey listing) —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Avalanche Rated Yes —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes / RoHS compliant —
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) - Ta — 9 A
Continuous Drain Current (ID) - Tc — 39.5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance (RDS(on)) max — 18 mΩ @ VGS = -10 V
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (QG) total — [DATA_NEEDED: QG total]
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 40 W
Rentang Suhu Kerja — -55°C to +150°C (TJ)
Status RoHS — Compliant
Level MSL — 1
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon