BSZ15DC02KDHXTMA1 vs BSZ180P03NS3EGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ15DC02KDHXTMA1 disebabkan oleh Infineon dan BSZ180P03NS3EGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSZ15DC02KDHXTMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| Jenis Transistor | N-Channel + P-Channel (complementary pair) | P-Channel MOSFET |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | OptiMOS P3 |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | — |
| P-Channel Continuous Drain Current (ID) | 3.2 A | — |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | — |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) - Ta | — | 9 A |
| Continuous Drain Current (ID) - Tc | — | 39.5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | — | 18 mΩ @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | — | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 40 W |
| Gambaran Suhu Operasi | — | -55°C to +150°C (TJ) |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 |
| Lead-Free | — | Yes |