BSZ900N20NS3GATMA1 vs BSC0906NSATMA1 Perbandingan

Perbandingan bersamaan detil BSZ900N20NS3GATMA1 dari Infineon dan BSC0906NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ900N20NS3GATMA1 BSC0906NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number BSZ900N20NS3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID, Tc=25C) 15.2 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) 90 mΩ —
Typical RDS(on) @ VGS=10V 77 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th) typ) 3.5 V —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg] —
Power Dissipation (PD, Tc=25C) 62.5 W —
Suhu Hubung Kerja -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Paket PG-TSDSON-8 (TDSON-8 FL) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
ESD Protection Yes (integrated) —
Avalanche Energy Rated Yes (EAS) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ VGS=10V]
Rentang Suhu Kerja — -55C to +150C (junction, typical)
Jumlah Pin — 8

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