CY62167EV30LL-45BVXI vs CY62168EV30LL-45BVXI Perbandingan

Perbandingan bersamaan detil CY62167EV30LL-45BVXI dari Infineon dan CY62168EV30LL-45BVXI dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
CY62168EV30LL-45BVXI CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon

CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon

CY62168EV30LL-45BVXI ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CY62167EV30LL-45BVXI CY62168EV30LL-45BVXI
Merek Infineon Infineon
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori Asynchronous SRAM (MoBL®) Volatile SRAM (asynchronous)
Density 16 Mbit (16,777,216 bits) —
Organisasi 1M × 16 / 2M × 8 (BYTE-pin configurable) 2M × 8
Access Time 45 ns 45 ns
Supply Voltage (VCC) 2.2 V to 3.6 V —
Active Current (1 MHz typical) 2 mA —
Antarmuka Parallel, asynchronous —
Suhu Kerja -40 °C to +85 °C (Industrial) -40 °C to +85 °C (Industrial)
Paket 48-ball VFBGA (6 × 8 × 1 mm) 48-ball VFBGA (6 x 8)
Package Code BV48 —
Tipe Mounting Surface Mount Surface Mount (BGA)
Standby Current [DATA_NEEDED: standby current µA] —
Byte Pin Yes (BYTE# for ×8 / ×16 selection) —
Status RoHS Compliant (Pb-free) Compliant
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Memory Family — MoBL (Micropower) SRAM
Ukuran Memori — 16 Mbit (2 M × 8)
Operating Voltage Range — 2.20 V to 3.60 V
Maximum Operating Voltage — 3.60 V
Minimum Operating Voltage — 2.20 V
Standby Current (typical) — 1.5 µA
Standby Current (maximum) — 12 µA
Active Current (typical @ 1 MHz) — 2.2 mA
Tipe Antarmuka — Parallel (asynchronous)
Chip Enable — CE1# (active low), CE2 (active high)
Write Enable — WE# (active low)
Output Enable — OE# (active low)

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