CY62167EV30LL-45BVXI vs CY62168EV30LL-45BVXI 对比

详细并排对比 CY62167EV30LL-45BVXI 出自 Infineon 和 CY62168EV30LL-45BVXI 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
CY62168EV30LL-45BVXI CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon

CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon

CY62168EV30LL-45BVXI ✓ 量产中

规格对比

参数 CY62167EV30LL-45BVXI CY62168EV30LL-45BVXI
品牌 Infineon Infineon
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.78 $3.75
存储器类型 Asynchronous SRAM (MoBL®) Volatile SRAM (asynchronous)
Density 16 Mbit (16,777,216 bits) —
存储组织 1M × 16 / 2M × 8 (BYTE-pin configurable) 2M × 8
Access Time 45 ns 45 ns
Supply Voltage (VCC) 2.2 V to 3.6 V —
Active Current (1 MHz typical) 2 mA —
接口 Parallel, asynchronous —
工作温度 -40 °C to +85 °C (Industrial) -40 °C to +85 °C (Industrial)
封装 48-ball VFBGA (6 × 8 × 1 mm) 48-ball VFBGA (6 x 8)
Package Code BV48 —
安装类型 Surface Mount Surface Mount (BGA)
Standby Current [DATA_NEEDED: standby current µA] —
Byte Pin Yes (BYTE# for ×8 / ×16 selection) —
RoHS 状态 Compliant (Pb-free) Compliant
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Memory Family — MoBL (Micropower) SRAM
存储容量 — 16 Mbit (2 M × 8)
Operating Voltage Range — 2.20 V to 3.60 V
Maximum Operating Voltage — 3.60 V
Minimum Operating Voltage — 2.20 V
Standby Current (typical) — 1.5 µA
Standby Current (maximum) — 12 µA
Active Current (typical @ 1 MHz) — 2.2 mA
接口类型 — Parallel (asynchronous)
Chip Enable — CE1# (active low), CE2 (active high)
Write Enable — WE# (active low)
Output Enable — OE# (active low)

数据手册与资源

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