EP3C10F256I7N vs EP3C10F256C6 Perbandingan
Perbandingan bersamaan detil EP3C10F256I7N dari Intel dan EP3C10F256C6 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3C10F256I7N | EP3C10F256C6 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone III | Cyclone III |
| Device Type | FPGA | — |
| Logic Elements (LE) | 10,320 | 10,320 |
| Logic Blocks | 10,320 | — |
| Embedded Memory | 423,936 bits | — |
| Total Memory Bits | 423,936 | 423,936 bits |
| Maximum User I/O | 182 | — |
| Embedded 18x18 Multipliers | 46 | 23 |
| PLLs | 2 | 2 |
| Process Technology | 65 nm | 60 nm low-power CMOS |
| Core Voltage | 1.2 V | — |
| Paket | 256-LBGA (FineLine BGA) | 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Suhu Kerja | -40C to +125C (Industrial) | -40 C to +125 C (industrial, suffix 'C') |
| Status RoHS | Compliant | Compliant (lead-free FBGA) |
| Lead Free | Yes | — |
| Level MSL | 3 | 3 (168 hours) |
| Maximum User I/Os | — | 182 |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V (typ. 1.2 V) |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Configuration Memory | — | SRAM-based (external EPCS flash required) |
| Speed Grade | — | 6 |