EP3C10F256I7N vs EP3C10F256C6 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3C10F256I7N disebabkan oleh Intel dan EP3C10F256C6 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3C10F256I7N | EP3C10F256C6 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone III | Cyclone III |
| Device Type | FPGA | — |
| Logic Elements (LE) | 10,320 | 10,320 |
| Logic Blocks | 10,320 | — |
| Embedded Memory | 423,936 bits | — |
| Total Memory Bits | 423,936 | 423,936 bits |
| Maximum User I/O | 182 | — |
| Embedded 18x18 Multipliers | 46 | 23 |
| PLLs | 2 | 2 |
| Process Technology | 65 nm | 60 nm low-power CMOS |
| Core Voltage | 1.2 V | — |
| Kemasan | 256-LBGA (FineLine BGA) | 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Suhu Operasi | -40C to +125C (Industrial) | -40 C to +125 C (industrial, suffix 'C') |
| Status RoHS | Compliant | Compliant (lead-free FBGA) |
| Lead Free | Yes | — |
| Aras MSL | 3 | 3 (168 hours) |
| Maximum User I/Os | — | 182 |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V (typ. 1.2 V) |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Configuration Memory | — | SRAM-based (external EPCS flash required) |
| Speed Grade | — | 6 |