EP3C10F256I7N vs EP3C10F256C6 比較
詳細並排比較 EP3C10F256I7N 由 Intel 與 EP3C10F256C6 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3C10F256I7N | EP3C10F256C6 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | Cyclone III | Cyclone III |
| Device Type | FPGA | — |
| Logic Elements (LE) | 10,320 | 10,320 |
| Logic Blocks | 10,320 | — |
| Embedded Memory | 423,936 bits | — |
| Total Memory Bits | 423,936 | 423,936 bits |
| Maximum User I/O | 182 | — |
| Embedded 18x18 Multipliers | 46 | 23 |
| PLLs | 2 | 2 |
| Process Technology | 65 nm | 60 nm low-power CMOS |
| Core Voltage | 1.2 V | — |
| 封裝 | 256-LBGA (FineLine BGA) | 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度 | -40C to +125C (Industrial) | -40 C to +125 C (industrial, suffix 'C') |
| RoHS 狀態 | Compliant | Compliant (lead-free FBGA) |
| Lead Free | Yes | — |
| MSL 等級 | 3 | 3 (168 hours) |
| Maximum User I/Os | — | 182 |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V (typ. 1.2 V) |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Configuration Memory | — | SRAM-based (external EPCS flash required) |
| Speed Grade | — | 6 |