EP3C10F256I7N vs EP3C10F256C6 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C10F256I7N sa pamamagitan ng Intel at EP3C10F256C6 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C10F256I7N | EP3C10F256C6 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Device Type | FPGA | — |
| Logic Elements (LE) | 10,320 | 10,320 |
| Logic Blocks | 10,320 | — |
| Embedded Memory | 423,936 bits | — |
| Total Memory Bits | 423,936 | 423,936 bits |
| Maximum User I/O | 182 | — |
| Embedded 18x18 Multipliers | 46 | 23 |
| PLLs | 2 | 2 |
| Process Technology | 65 nm | 60 nm low-power CMOS |
| Core Voltage | 1.2 V | — |
| Packhaging | 256-LBGA (FineLine BGA) | 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | -40C to +125C (Industrial) | -40 C to +125 C (industrial, suffix 'C') |
| Tindminan RoHS | Compliant | Compliant (lead-free FBGA) |
| Lead Free | Yes | — |
| Level ng MSL | 3 | 3 (168 hours) |
| Maximum User I/Os | — | 182 |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V (typ. 1.2 V) |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Configuration Memory | — | SRAM-based (external EPCS flash required) |
| Speed Grade | — | 6 |