EP3C40F780C6N vs EP3C40F780C7N Perbandingan
Perbandingan bersamaan detil EP3C40F780C6N dari Intel dan EP3C40F780C7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3C40F780C6N | EP3C40F780C7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 39,600 | 39,600 LE |
| Embedded Memory Bits | 1,161,216 | — |
| Embedded Memory (Kbytes) | 113 | — |
| M9K Memory Blocks | 126 | — |
| Logic Array Blocks (LABs) | 4,065 | — |
| Maximum User I/O Pins | 535 | — |
| PLLs | 4 | 4 |
| Process Technology | 60 nm CMOS | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | 6 (commercial) | 7 (C7, commercial) |
| Suhu Kerja | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Paket | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm | — |
| Ball Pitch | 1.0 mm | — |
| Package Height | 2.6 mm | — |
| Tipe Mounting | Surface Mount (FBGA) | — |
| Lead Free | Yes | — |
| Configuration Method | SRAM, JTAG via USB-Blaster | JTAG, Active Serial, Passive Serial |
| Status RoHS | Compliant | — |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Supply Voltage (Core) | — | 1.2 V |
| Global Clock Networks | — | 20 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |