EP3C40F780C6N vs EP3C40F780C7N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3C40F780C6N disebabkan oleh Intel dan EP3C40F780C7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3C40F780C6N | EP3C40F780C7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 39,600 | 39,600 LE |
| Embedded Memory Bits | 1,161,216 | — |
| Embedded Memory (Kbytes) | 113 | — |
| M9K Memory Blocks | 126 | — |
| Logic Array Blocks (LABs) | 4,065 | — |
| Maximum User I/O Pins | 535 | — |
| PLLs | 4 | 4 |
| Process Technology | 60 nm CMOS | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | 6 (commercial) | 7 (C7, commercial) |
| Suhu Operasi | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Kemasan | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm | — |
| Ball Pitch | 1.0 mm | — |
| Package Height | 2.6 mm | — |
| Jenis Pemasangan | Surface Mount (FBGA) | — |
| Lead Free | Yes | — |
| Configuration Method | SRAM, JTAG via USB-Blaster | JTAG, Active Serial, Passive Serial |
| Status RoHS | Compliant | — |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Supply Voltage (Core) | — | 1.2 V |
| Global Clock Networks | — | 20 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |