EP3C40F780C6N vs EP3C40F780C7N 比較
詳細並排比較 EP3C40F780C6N 由 Intel 與 EP3C40F780C7N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3C40F780C6N | EP3C40F780C7N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | 啟用中 |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 39,600 | 39,600 LE |
| Embedded Memory Bits | 1,161,216 | — |
| Embedded Memory (Kbytes) | 113 | — |
| M9K Memory Blocks | 126 | — |
| Logic Array Blocks (LABs) | 4,065 | — |
| Maximum User I/O Pins | 535 | — |
| PLLs | 4 | 4 |
| Process Technology | 60 nm CMOS | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | 6 (commercial) | 7 (C7, commercial) |
| 工作溫度 | 0C to +85C (commercial) | 0C to +85C (commercial) |
| 封裝 | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm | — |
| Ball Pitch | 1.0 mm | — |
| Package Height | 2.6 mm | — |
| 安裝類型 | Surface Mount (FBGA) | — |
| Lead Free | Yes | — |
| Configuration Method | SRAM, JTAG via USB-Blaster | JTAG, Active Serial, Passive Serial |
| RoHS 狀態 | Compliant | — |
| Total RAM Bits | — | 1,161,216 bits |
| Embedded Multipliers | — | 126 (18x18) |
| User I/Os | — | 535 |
| Process Node | — | 65 nm TSMC low-power |
| Supply Voltage (Core) | — | 1.2 V |
| Global Clock Networks | — | 20 |
| Lead-Free / RoHS | — | Yes (N suffix) |
| Moisture Sensitivity Level | — | MSL3 (per J-STD-020) |