EP3C40F780I8N vs EP3C40F780C8 Perbandingan

Perbandingan bersamaan detil EP3C40F780I8N dari Intel dan EP3C40F780C8 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3C40F780I8N EP3C40F780C8
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family Cyclone III Cyclone III
Device Logic Elements 39,600 —
Logic Array Blocks (LABs/CLBs) 2,475 —
Embedded Memory (bits) 1,161,216 —
Embedded Memory (Kbits) 1,134 —
Embedded Multipliers (18x18) 126 —
Number of PLLs 4 —
User I/O Pins 535 —
I/O Banks 20 —
Nominal Core Supply Voltage 1.2 V (1.15 V to 1.25 V) —
Paket 780-ball FBGA (F780) 780-ball FBGA (FineLine BGA)
Package Ball Pitch 1.0 mm —
Process Technology TSMC 65 nm low-power CMOS 65 nm low-power CMOS
Operating Temperature Grade Industrial (-40 °C to +100 °C junction) —
Configuration Modes Passive Serial, Active Serial (EPCS), JTAG, Fast Passive Parallel —
Status RoHS Compliant Compliant
Level MSL 3 —
Tipe Mounting Surface Mount (BGA) Surface Mount (BGA)
Series — EP3C40
Logic Elements — 39,600
Total Memory Bits — 1,161,216 bits (1134 Kbit)
Embedded Memory — M9K blocks, 486 Kbit total (per family datasheet)
Embedded 18x18 Multipliers — 126
General Purpose PLLs — 4
Global Clock Networks — 20
Maximum User I/O Pins — 535
Speed Grade — C8 (commercial, -40C to +85C operating range per 'C' designator family convention)
User I/O Banks — [DATA_NEEDED: user I/O bank count]
Supported Memory Interfaces — DDR, DDR2, QDRII SRAM (via dedicated PHY)
Configuration — Serial (AS) / Parallel (AP) / JTAG

Spek dan Sumber

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