EP3C40F780I8N vs EP3C40F780C8 比較

詳細並排比較 EP3C40F780I8N 由 Intel 與 EP3C40F780C8 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3C40F780I8N EP3C40F780C8
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 啟用中
Family Cyclone III Cyclone III
Device Logic Elements 39,600 —
Logic Array Blocks (LABs/CLBs) 2,475 —
Embedded Memory (bits) 1,161,216 —
Embedded Memory (Kbits) 1,134 —
Embedded Multipliers (18x18) 126 —
Number of PLLs 4 —
User I/O Pins 535 —
I/O Banks 20 —
Nominal Core Supply Voltage 1.2 V (1.15 V to 1.25 V) —
封裝 780-ball FBGA (F780) 780-ball FBGA (FineLine BGA)
Package Ball Pitch 1.0 mm —
Process Technology TSMC 65 nm low-power CMOS 65 nm low-power CMOS
Operating Temperature Grade Industrial (-40 °C to +100 °C junction) —
Configuration Modes Passive Serial, Active Serial (EPCS), JTAG, Fast Passive Parallel —
RoHS 狀態 Compliant Compliant
MSL 等級 3 —
安裝類型 Surface Mount (BGA) Surface Mount (BGA)
Series — EP3C40
Logic Elements — 39,600
Total Memory Bits — 1,161,216 bits (1134 Kbit)
Embedded Memory — M9K blocks, 486 Kbit total (per family datasheet)
Embedded 18x18 Multipliers — 126
General Purpose PLLs — 4
Global Clock Networks — 20
Maximum User I/O Pins — 535
Speed Grade — C8 (commercial, -40C to +85C operating range per 'C' designator family convention)
User I/O Banks — [DATA_NEEDED: user I/O bank count]
Supported Memory Interfaces — DDR, DDR2, QDRII SRAM (via dedicated PHY)
Configuration — Serial (AS) / Parallel (AP) / JTAG

資料表與資源

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