EP3SE260F1517I3 vs EP3SE260F1517C4N Perbandingan
Perbandingan bersamaan detil EP3SE260F1517I3 dari Intel dan EP3SE260F1517C4N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3SE260F1517I3 | EP3SE260F1517C4N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | NRND |
| Family | Stratix III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory (bits) | 16,672,768 | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | 976 |
| Paket | 1517-BBGA, FCBGA | 1517-BBGA, FCBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Operating Temperature Grade | Industrial | — |
| Junction Temperature Range | -40C to +125C | — |
| Core Voltage | 1.0 V typical | 0.9 V |
| Process Technology | 65 nm CMOS | — |
| Maximum Core Frequency | 717 MHz | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, HSTL, SSTL | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Configuration | SRAM-based, volatile (requires external configuration device) | — |
| Series | — | Stratix® III E |
| Embedded Memory | — | 16,672,768 bits |
| Suhu Kerja | — | 0°C to 85°C |
| Process Node | — | 65 nm |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| Maximum Transceiver Data Rate | — | 12.5 Gbps |