EP3SE260F1517I3 vs EP3SE260F1517C4N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260F1517I3 disebabkan oleh Intel dan EP3SE260F1517C4N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3SE260F1517I3 | EP3SE260F1517C4N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | NRND |
| Family | Stratix III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory (bits) | 16,672,768 | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | 976 |
| Kemasan | 1517-BBGA, FCBGA | 1517-BBGA, FCBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Operating Temperature Grade | Industrial | — |
| Junction Temperature Range | -40C to +125C | — |
| Core Voltage | 1.0 V typical | 0.9 V |
| Process Technology | 65 nm CMOS | — |
| Maximum Core Frequency | 717 MHz | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, HSTL, SSTL | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Configuration | SRAM-based, volatile (requires external configuration device) | — |
| Series | — | Stratix® III E |
| Embedded Memory | — | 16,672,768 bits |
| Suhu Operasi | — | 0°C to 85°C |
| Process Node | — | 65 nm |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| Maximum Transceiver Data Rate | — | 12.5 Gbps |