EP3SE260H780I4LG vs EP3SE50F780I4LG Perbandingan
Perbandingan bersamaan detil EP3SE260H780I4LG dari Intel dan EP3SE50F780I4LG dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3SE260H780I4LG | EP3SE50F780I4LG |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | NRND |
| Series | Stratix III Enhanced | Stratix III E |
| Family | EP3SE260 | Stratix III |
| Logic Elements | 255,000 LE | 47,500 |
| Adaptive Logic Modules (ALMs) | 102,000 ALM | 19,000 |
| Embedded Memory | 15.90 Mbit | 5.49 Mbit |
| DSP Blocks | 304 | Yes (dedicated, count not in source data) |
| 18x18 Multipliers | 840 | — |
| User I/O | 488 | — |
| PLLs | 8 (4 fractional + 4 general-purpose) | — |
| Speed Grade | -4 | — |
| Temperature Grade | Industrial (I) | — |
| Paket | 780-ball FineLine BGA (HBGA) | 780-ball FCBGA (FBGA-780) |
| Suhu Kerja | -40C to +100C | — |
| Process Technology | 65 nm low-power CMOS | — |
| Configuration Method | JTAG / Passive Serial / Fast Passive Parallel / Active Serial | — |
| Maximum User I/Os | — | 488 |
| Operating Supply Voltage (Core) | — | 1.1 V |
| Tipe Mounting | — | Surface Mount |
| Rentang Suhu Kerja | — | -40 C to +100 C |
| Process Node | — | 65 nm |
| High-Speed Transceivers | — | Multi-gigabit, count not in source data |
| Lead-Free / RoHS | — | Yes (G suffix = Pb-free) |
| Packaging | — | Tray |
| Tipe Memori | — | Embedded SRAM block RAM |