EP3SE260H780I4LG vs EP3SE50F780I4LG 比較
詳細並排比較 EP3SE260H780I4LG 由 Intel 與 EP3SE50F780I4LG 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE260H780I4LG | EP3SE50F780I4LG |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | NRND | NRND |
| Series | Stratix III Enhanced | Stratix III E |
| Family | EP3SE260 | Stratix III |
| Logic Elements | 255,000 LE | 47,500 |
| Adaptive Logic Modules (ALMs) | 102,000 ALM | 19,000 |
| Embedded Memory | 15.90 Mbit | 5.49 Mbit |
| DSP Blocks | 304 | Yes (dedicated, count not in source data) |
| 18x18 Multipliers | 840 | — |
| User I/O | 488 | — |
| PLLs | 8 (4 fractional + 4 general-purpose) | — |
| Speed Grade | -4 | — |
| Temperature Grade | Industrial (I) | — |
| 封裝 | 780-ball FineLine BGA (HBGA) | 780-ball FCBGA (FBGA-780) |
| 工作溫度 | -40C to +100C | — |
| Process Technology | 65 nm low-power CMOS | — |
| Configuration Method | JTAG / Passive Serial / Fast Passive Parallel / Active Serial | — |
| Maximum User I/Os | — | 488 |
| Operating Supply Voltage (Core) | — | 1.1 V |
| 安裝類型 | — | Surface Mount |
| 工作溫度範圍 | — | -40 C to +100 C |
| Process Node | — | 65 nm |
| High-Speed Transceivers | — | Multi-gigabit, count not in source data |
| Lead-Free / RoHS | — | Yes (G suffix = Pb-free) |
| Packaging | — | Tray |
| 記憶體類型 | — | Embedded SRAM block RAM |