EP3SE260H780I4LG vs EP3SE50F780I4LG Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260H780I4LG disebabkan oleh Intel dan EP3SE50F780I4LG disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3SE260H780I4LG | EP3SE50F780I4LG |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | NRND |
| Series | Stratix III Enhanced | Stratix III E |
| Family | EP3SE260 | Stratix III |
| Logic Elements | 255,000 LE | 47,500 |
| Adaptive Logic Modules (ALMs) | 102,000 ALM | 19,000 |
| Embedded Memory | 15.90 Mbit | 5.49 Mbit |
| DSP Blocks | 304 | Yes (dedicated, count not in source data) |
| 18x18 Multipliers | 840 | — |
| User I/O | 488 | — |
| PLLs | 8 (4 fractional + 4 general-purpose) | — |
| Speed Grade | -4 | — |
| Temperature Grade | Industrial (I) | — |
| Kemasan | 780-ball FineLine BGA (HBGA) | 780-ball FCBGA (FBGA-780) |
| Suhu Operasi | -40C to +100C | — |
| Process Technology | 65 nm low-power CMOS | — |
| Configuration Method | JTAG / Passive Serial / Fast Passive Parallel / Active Serial | — |
| Maximum User I/Os | — | 488 |
| Operating Supply Voltage (Core) | — | 1.1 V |
| Jenis Pemasangan | — | Surface Mount |
| Gambaran Suhu Operasi | — | -40 C to +100 C |
| Process Node | — | 65 nm |
| High-Speed Transceivers | — | Multi-gigabit, count not in source data |
| Lead-Free / RoHS | — | Yes (G suffix = Pb-free) |
| Packaging | — | Tray |
| Jenis Ingatan | — | Embedded SRAM block RAM |