EP4CE15F23C8N vs EP4CE15U14A7N Perbandingan

Perbandingan bersamaan detil EP4CE15F23C8N dari Intel dan EP4CE15U14A7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP4CE15F23C8N EP4CE15U14A7N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone IV E —
Logic Elements 15,408 —
Embedded Memory Bits 516,096 bits (63 KBytes) —
Embedded Multipliers (18x18) 343 —
General-purpose PLLs 4 —
Maximum User I/O Pins 343 —
Paket 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) 256-ball UBGA (Ultra-FineLine BGA)
Process Technology 60 nm low-leakage CMOS —
Core Voltage (VCCINT) 1.0 V to 1.2 V —
I/O Bank Voltage (VCCIO) 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
Suhu Kerja 0C to 85C (Commercial) [DATA_NEEDED: operating temperature range]
Speed Grade C8 (commercial, 8 ns internal timing) 7
Configuration Modes AS / PS / JTAG / FPP JTAG, AS, AP, PS
Tipe Mounting Surface Mount (BGA) —
Level MSL MSL3 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant (per distributor listings)
Hard IP Blocks PCIe Gen1 root port, external memory interface —
Embedded Memory Type M9K (9 Kbit each) —
Family — Cyclone IV E
Logic Elements (LE) — 15,408
Total Memory Bits — 516,096 bits
Embedded 18x18 Multipliers — 56
General-Purpose PLLs — 4
Maximum User I/Os — 165
Core Voltage — 1.2 V
Process Node — 60 nm low-power
Bitstream Encryption — AES-128 (security-enhanced variant)
External Memory Support — DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II

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