EP4CE55F23I7N vs EP4CE75F23I7N Perbandingan

Perbandingan bersamaan detil EP4CE55F23I7N dari Intel dan EP4CE75F23I7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP4CE55F23I7N EP4CE75F23I7N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone IV E —
Logic Elements 55,856 —
Configurable Logic Blocks (CLBs) 3,491 —
Embedded Memory 2,396,160 bits —
Embedded 18x18 Multipliers 56 15
PLLs 4 4
Maximum User I/O 324 —
Paket 484-ball FBGA (23x23 mm, 1.0 mm pitch) 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch)
Process Technology TSMC 60 nm low-power 60 nm low-power CMOS
Core Voltage 1.2 V —
Suhu Kerja -40C to +100C (industrial, I7 grade) —
Tipe Mounting Surface Mount (BGA) —
Lead-Free / RoHS Yes (lead-free finish) —
Configuration Modes JTAG, AS, PS, FPP Active Serial (AS), Passive Serial (PS), JTAG
Memory Interface Support DDR, DDR2, QDRII —
Product Line — Cyclone IV E
Family — Cyclone IV E (EP4CE)
Logic Elements (LEs) — 75,408
Logic Array Blocks (LABs) — 4,713
Embedded Memory Bits — 2,810,880 bits (312 M9K blocks)
Distributed RAM Bits — 200 Kbits
Global Clocks — [DATA_NEEDED: global clock network count]
Maximum User I/Os — 292
Core Voltage (VCCINT) — 1.2 V nominal
I/O Voltage (VCCIO) — 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank)
Operating Temperature Grade — Industrial (I7: -40C to +100C Tj)
External Memory Interfaces — DDR / DDR2 SDRAM, QDRII SRAM
Design Software — Quartus II / Quartus Prime
Status RoHS — Compliant

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