EP4CE55F23I7N vs EP4CE75F23I7N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE55F23I7N disebabkan oleh Intel dan EP4CE75F23I7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP4CE55F23I7N EP4CE75F23I7N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Cyclone IV E —
Logic Elements 55,856 —
Configurable Logic Blocks (CLBs) 3,491 —
Embedded Memory 2,396,160 bits —
Embedded 18x18 Multipliers 56 15
PLLs 4 4
Maximum User I/O 324 —
Kemasan 484-ball FBGA (23x23 mm, 1.0 mm pitch) 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch)
Process Technology TSMC 60 nm low-power 60 nm low-power CMOS
Core Voltage 1.2 V —
Suhu Operasi -40C to +100C (industrial, I7 grade) —
Jenis Pemasangan Surface Mount (BGA) —
Lead-Free / RoHS Yes (lead-free finish) —
Configuration Modes JTAG, AS, PS, FPP Active Serial (AS), Passive Serial (PS), JTAG
Memory Interface Support DDR, DDR2, QDRII —
Product Line — Cyclone IV E
Family — Cyclone IV E (EP4CE)
Logic Elements (LEs) — 75,408
Logic Array Blocks (LABs) — 4,713
Embedded Memory Bits — 2,810,880 bits (312 M9K blocks)
Distributed RAM Bits — 200 Kbits
Global Clocks — [DATA_NEEDED: global clock network count]
Maximum User I/Os — 292
Core Voltage (VCCINT) — 1.2 V nominal
I/O Voltage (VCCIO) — 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank)
Operating Temperature Grade — Industrial (I7: -40C to +100C Tj)
External Memory Interfaces — DDR / DDR2 SDRAM, QDRII SRAM
Design Software — Quartus II / Quartus Prime
Status RoHS — Compliant

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