EP4CE55F29C9LN vs EP4CE55F29C8N Perbandingan
Perbandingan bersamaan detil EP4CE55F29C9LN dari Intel dan EP4CE55F29C8N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP4CE55F29C9LN | EP4CE55F29C8N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | NRND |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 55,856 | 55,856 |
| Embedded Memory | 2,396,160 bits | 2,340 Kbits |
| Embedded 18x18 Multipliers | 374 | — |
| Logic Array Blocks (LAB) | 3,491 | — |
| M9K Memory Blocks | 260 | — |
| PLLs | 4 | 4 to 8 (per device) |
| Maximum User I/O Pins | 374 | 374 |
| Technology Node | 60 nm | — |
| Core Voltage (VCCINT) | 1.2 V | — |
| Suhu Hubung Kerja | 0 °C to 85 °C (commercial) | — |
| Paket | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free terminal finish, suffix 'N') | — |
| Speed Grade | C9 | 8 (commercial) |
| Embedded Multiplier Blocks (18x18) | — | 154 |
| Logic Array Blocks (LABs) | — | 3,491 |
| Process Technology | — | 60 nm (TSMC low-power) |
| Core Voltage | — | 1.2 V |
| Temperature Grade | — | Commercial (0 C to +85 C) |
| Configuration Method | — | SRAM-based, volatile (requires external config device) |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per part marking) |