EP4CE55F29C9LN vs EP4CE55F29C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55F29C9LN sa pamamagitan ng Intel at EP4CE55F29C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE55F29C9LN | EP4CE55F29C8N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 55,856 | 55,856 |
| Embedded Memory | 2,396,160 bits | 2,340 Kbits |
| Embedded 18x18 Multipliers | 374 | — |
| Logic Array Blocks (LAB) | 3,491 | — |
| M9K Memory Blocks | 260 | — |
| PLLs | 4 | 4 to 8 (per device) |
| Maximum User I/O Pins | 374 | 374 |
| Technology Node | 60 nm | — |
| Core Voltage (VCCINT) | 1.2 V | — |
| Temperature ng Junction na Operasyon | 0 °C to 85 °C (commercial) | — |
| Packhaging | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free terminal finish, suffix 'N') | — |
| Speed Grade | C9 | 8 (commercial) |
| Embedded Multiplier Blocks (18x18) | — | 154 |
| Logic Array Blocks (LABs) | — | 3,491 |
| Process Technology | — | 60 nm (TSMC low-power) |
| Core Voltage | — | 1.2 V |
| Temperature Grade | — | Commercial (0 C to +85 C) |
| Configuration Method | — | SRAM-based, volatile (requires external config device) |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per part marking) |