EP4CE55F29C9LN vs EP4CE55F29C8N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE55F29C9LN disebabkan oleh Intel dan EP4CE55F29C8N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE55F29C9LN | EP4CE55F29C8N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | NRND |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 55,856 | 55,856 |
| Embedded Memory | 2,396,160 bits | 2,340 Kbits |
| Embedded 18x18 Multipliers | 374 | — |
| Logic Array Blocks (LAB) | 3,491 | — |
| M9K Memory Blocks | 260 | — |
| PLLs | 4 | 4 to 8 (per device) |
| Maximum User I/O Pins | 374 | 374 |
| Technology Node | 60 nm | — |
| Core Voltage (VCCINT) | 1.2 V | — |
| Suhu Hubungan Operasi | 0 °C to 85 °C (commercial) | — |
| Kemasan | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free terminal finish, suffix 'N') | — |
| Speed Grade | C9 | 8 (commercial) |
| Embedded Multiplier Blocks (18x18) | — | 154 |
| Logic Array Blocks (LABs) | — | 3,491 |
| Process Technology | — | 60 nm (TSMC low-power) |
| Core Voltage | — | 1.2 V |
| Temperature Grade | — | Commercial (0 C to +85 C) |
| Configuration Method | — | SRAM-based, volatile (requires external config device) |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per part marking) |