EP4CGX110DF31C7N vs EP4CGX110DF31C8N Perbandingan

Perbandingan bersamaan detil EP4CGX110DF31C7N dari Intel dan EP4CGX110DF31C8N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP4CGX110DF31C7N EP4CGX110DF31C8N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family Cyclone IV GX Cyclone IV GX
Logic Elements 109,424 109,424
Embedded Memory (bits) 5,621,760 —
Maximum User I/O 475 —
Process Technology 60 nm 60 nm low-power CMOS
Core Voltage (VCCINT) 1.2 V nominal (1.16 V to 1.24 V) —
PLL Analog Voltage (VCCA) 2.5 V nominal (2.375 V to 2.625 V) —
I/O Bank Voltage (VCCIO) 1.2 V to 3.3 V (bank-dependent) —
Transceivers 8 channels, up to 3.125 Gbps 8 high-speed transceivers up to 3.125 Gbps
Hard IP Block PCIe Gen1 x1/x2/x4 —
PLLs 4 general-purpose 4 general-purpose PLLs
Paket 896-ball FBGA (F31) 896-ball FineLine BGA (F31), 31 mm
Speed Grade C7 (commercial) 8
Operating Temperature (Commercial) 0 °C to 85 °C (TJ) 0C to 85C
Tipe Mounting Surface Mount —
Status RoHS Compliant Compliant
Logic Array Blocks (LABs) — 6,839
Embedded Memory Bits — 5,621,760 (approximately 702 Kbits)
Embedded Memory Blocks — M9K blocks, 9-bit parity
DSP Blocks (18x18 Multipliers) — 264 multipliers
Maximum User I/Os — 475
I/O Banks — 8
PCI Express Hard IP — PCIe Gen1/Gen2 x1/x2/x4
Core Supply Voltage — 1.2 V
Configuration — SRAM-based, supports AS, PS, JTAG, FPP

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