EP4CGX110DF31C7N vs EP4CGX110DF31C8N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CGX110DF31C7N disebabkan oleh Intel dan EP4CGX110DF31C8N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP4CGX110DF31C7N EP4CGX110DF31C8N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family Cyclone IV GX Cyclone IV GX
Logic Elements 109,424 109,424
Embedded Memory (bits) 5,621,760 —
Maximum User I/O 475 —
Process Technology 60 nm 60 nm low-power CMOS
Core Voltage (VCCINT) 1.2 V nominal (1.16 V to 1.24 V) —
PLL Analog Voltage (VCCA) 2.5 V nominal (2.375 V to 2.625 V) —
I/O Bank Voltage (VCCIO) 1.2 V to 3.3 V (bank-dependent) —
Transceivers 8 channels, up to 3.125 Gbps 8 high-speed transceivers up to 3.125 Gbps
Hard IP Block PCIe Gen1 x1/x2/x4 —
PLLs 4 general-purpose 4 general-purpose PLLs
Kemasan 896-ball FBGA (F31) 896-ball FineLine BGA (F31), 31 mm
Speed Grade C7 (commercial) 8
Operating Temperature (Commercial) 0 °C to 85 °C (TJ) 0C to 85C
Jenis Pemasangan Surface Mount —
Status RoHS Compliant Compliant
Logic Array Blocks (LABs) — 6,839
Embedded Memory Bits — 5,621,760 (approximately 702 Kbits)
Embedded Memory Blocks — M9K blocks, 9-bit parity
DSP Blocks (18x18 Multipliers) — 264 multipliers
Maximum User I/Os — 475
I/O Banks — 8
PCI Express Hard IP — PCIe Gen1/Gen2 x1/x2/x4
Core Supply Voltage — 1.2 V
Configuration — SRAM-based, supports AS, PS, JTAG, FPP

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga