EP4CGX50CF23C7N vs EP4CGX50DF23C7N Perbandingan

Perbandingan bersamaan detil EP4CGX50CF23C7N dari Intel dan EP4CGX50DF23C7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP4CGX50CF23C7N EP4CGX50DF23C7N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family Cyclone IV GX Cyclone IV GX
Logic Elements (LE) 49,888 —
Embedded Memory (Bits) 2,562,048 (2.5 Mb) —
User I/O 290 —
Logic Array Blocks 47 —
Multi-Gigabit Transceivers 4 channels up to 3.125 Gbps —
Hard Memory Controllers Yes (DDR/DDR2/QDRII/QDRII+/RLDRAM II) —
Core Voltage 1.2 V —
I/O Voltage Standards LVTTL, LVCMOS, LVDS, SSTL, HSTL (1.2V-3.3V) —
Paket 484-FBGA (F23, 23 x 23 mm) 484-ball FBGA (Plastic BGA, S-PBGA-B484, 23x23 mm)
Speed Grade C7 (commercial) —
Suhu Kerja -40C to +85C (commercial) 0 °C to 85 °C (commercial)
Process Technology 60 nm TSMC low-power 60 nm
Configuration Modes JTAG, Active Serial (EPCS), Passive Serial, Fast Passive Parallel Passive Serial (PS), Active Serial (AS), JTAG
Status RoHS Compliant (lead-free) Compliant (Pb-free variant)
Tipe Mounting Surface Mount Surface Mount
Logic Elements — 49,888
Configurable Logic Blocks (CLBs) — 3,118
Total RAM Bits — 2,432 Kbit (≈ 304 KB)
Embedded 18x18 Multipliers — 66
PLLs — 2
Global Clock Networks — 8 (with up to 16 clock pins per region)
Number of I/O Pins — 290
Transceivers — Up to 8 channels, 3.125 Gbps
Core Supply Voltage (VCCINT) — 1.15 V to 1.25 V (nominal 1.2 V)
Supported Memory Interfaces — DDR2 SDRAM, QDRII SRAM, RLDRAM II
Level MSL — 3 (168 hours)

Spek dan Sumber

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