EP4CGX50CF23C7N vs EP4CGX50DF23C7N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CGX50CF23C7N sa pamamagitan ng Intel at EP4CGX50DF23C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CGX50CF23C7N EP4CGX50DF23C7N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV GX Cyclone IV GX
Logic Elements (LE) 49,888 —
Embedded Memory (Bits) 2,562,048 (2.5 Mb) —
User I/O 290 —
Logic Array Blocks 47 —
Multi-Gigabit Transceivers 4 channels up to 3.125 Gbps —
Hard Memory Controllers Yes (DDR/DDR2/QDRII/QDRII+/RLDRAM II) —
Core Voltage 1.2 V —
I/O Voltage Standards LVTTL, LVCMOS, LVDS, SSTL, HSTL (1.2V-3.3V) —
Packhaging 484-FBGA (F23, 23 x 23 mm) 484-ball FBGA (Plastic BGA, S-PBGA-B484, 23x23 mm)
Speed Grade C7 (commercial) —
Temperature na Operasyon -40C to +85C (commercial) 0 °C to 85 °C (commercial)
Process Technology 60 nm TSMC low-power 60 nm
Configuration Modes JTAG, Active Serial (EPCS), Passive Serial, Fast Passive Parallel Passive Serial (PS), Active Serial (AS), JTAG
Tindminan RoHS Compliant (lead-free) Compliant (Pb-free variant)
Uri ng Pagpapasok Surface Mount Surface Mount
Logic Elements — 49,888
Configurable Logic Blocks (CLBs) — 3,118
Total RAM Bits — 2,432 Kbit (≈ 304 KB)
Embedded 18x18 Multipliers — 66
PLLs — 2
Global Clock Networks — 8 (with up to 16 clock pins per region)
Number of I/O Pins — 290
Transceivers — Up to 8 channels, 3.125 Gbps
Core Supply Voltage (VCCINT) — 1.15 V to 1.25 V (nominal 1.2 V)
Supported Memory Interfaces — DDR2 SDRAM, QDRII SRAM, RLDRAM II
Level ng MSL — 3 (168 hours)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita