H5AN4G6NBJR-UHC vs H5ANAG4NBJR-UHC Perbandingan
Perbandingan bersamaan detil H5AN4G6NBJR-UHC dari SK hynix dan H5ANAG4NBJR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G6NBJR-UHC | H5ANAG4NBJR-UHC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x16 |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.14 V to 1.26 V (nominal 1.2 V) |
| Technology | CMOS | — |
| Suhu Kerja | -40C to +95C | -40C to +95C |
| Paket | FBGA-96 (PBGA-96) | FBGA-96 (PBGA96) |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | Yes |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC Function | Yes (command/address CRC) | Yes |
| Status RoHS | Compliant | Compliant |
| Density | — | 4 Gbit |
| Clock / Data Rate | — | 1.6 GHz |
| Antarmuka | — | CMOS, DDR4 (double data rate) |
| Data Mask (DM) | — | Yes |
| On-Die Termination (ODT) | — | Dynamic ODT |
| Auto Self-Refresh | — | Yes |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency / speed bin detail] |