H5AN4G8NBJR-RDC vs H5AN4G8NBJR-PBC Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-RDC dari SK hynix dan H5AN4G8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-RDC | H5AN4G8NBJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Antarmuka | DDR4 (Double Data Rate IV) | — |
| Paket | 78-ball FBGA | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat | [DATA_NEEDED: VDD supply voltage] | — |
| Laju Data | [DATA_NEEDED: speed grade Mbps] | — |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| Status RoHS | Lead-Free & Halogen-Free (RoHS Compliant) | — |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Memory Density | — | 4 Gbit |
| Tipe Antarmuka | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Bebas Halogen | — | Yes |