H5AN4G8NBJR-UHI vs K4A8G085WB-BCWE Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-UHI dari SK hynix dan K4A8G085WB-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-UHI | K4A8G085WB-BCWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $12,30 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gb |
| Organisasi | 512M x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Paket | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Laju Data | 2400 MT/s | 3200 Mbps |
| Antarmuka | JEDEC DDR4 SDRAM | DDR4 (SSTL12) |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | — |
| Termination | On-die termination (ODT) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensi CAS | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance statement] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Classification | — | B-die |
| Application Domain | — | Server, industrial control, networking, embedded systems |
| VREF AC-Noise Derating | — | +/-1% of VDD included in timing deratings |
| Package Body Size | — | [DATA_NEEDED: package dimensions in mm] |