H5AN4G8NBJR-UHI vs K4A8G085WB-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-UHI sa pamamagitan ng SK hynix at K4A8G085WB-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-UHI | K4A8G085WB-BCWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $12.30 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gb |
| Organisasyon | 512M x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Packhaging | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Rate ng Data | 2400 MT/s | 3200 Mbps |
| Interface | JEDEC DDR4 SDRAM | DDR4 (SSTL12) |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | — |
| Termination | On-die termination (ODT) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latensya ng CAS | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance statement] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Classification | — | B-die |
| Application Domain | — | Server, industrial control, networking, embedded systems |
| VREF AC-Noise Derating | — | +/-1% of VDD included in timing deratings |
| Package Body Size | — | [DATA_NEEDED: package dimensions in mm] |