H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-UHC Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-VKIR dari SK hynix dan H5AN4G8NBJR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ Aktif
SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-VKIR H5AN4G8NBJR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gbit
Organisasi 512M x 8 512M x 8
Laju Data 2666 Mbps per pin 2400 Mbps (PC2400)
Supply Voltage (VDD) 1.2 V —
Paket 78-ball FBGA TFBGA-78 (11 x 7.5 mm)
Tipe Mounting Surface Mount Surface Mount
Operating Temperature (Industrial) -40C to +85C (case) —
Extended Temperature Range +85C to +95C (case, per datasheet conditions) —
Technology CMOS DRAM CMOS DRAM
Product Family H5AN4G4/6/8NBJR series —
Speed Grade Code -VKI —
Packing Suffix R (Tape & Reel) —
VPP Supply [DATA_NEEDED: VPP supply voltage] —
Latensi CAS [DATA_NEEDED: CAS latency] [DATA_NEEDED: CAS latency for -UHC speed bin]
Package Dimensions [DATA_NEEDED: package dimensions] —
Refresh [DATA_NEEDED: refresh interval specification] [DATA_NEEDED: refresh rate 1x/2x/4x support]
Tegangan Pemuat — 1.2 V
Antarmuka — DDR4 (JEDEC)
Lifecycle Code — Active
Status RoHS — Compliant (Rohs Code: Yes)
REACH Compliance — Compliant
Manufacturer — SK Hynix Inc.
Suhu Kerja — [DATA_NEEDED: operating temperature range]

Spek dan Sumber

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