H5AN8G4NAFR-UHC vs H5AN8G4NAFR-PBC Perbandingan
Perbandingan bersamaan detil H5AN8G4NAFR-UHC dari SK hynix dan H5AN8G4NAFR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G4NAFR-UHC | H5AN8G4NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | SK hynix (Hynix Semiconductor) | — |
| Tipe Memori | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 2G x4 | 2Gb x 4 |
| Supply Voltage (VDD) | 1.2 V | — |
| Speed Grade | UHC | — |
| Antarmuka | Synchronous, dual rising/falling clock edges | — |
| Clock Input | Differential CK_t / CK_c | — |
| Paket | 78-ball FBGA | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Family Variants | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Datasheet Revision | Rev. 1.2 (Jul. 2017), 45 pages | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Packaging | [DATA_NEEDED: reel / tray quantity] | — |
| Interface Voltage (VDD/VDDQ) | — | 1.2 V +/- 0.06 V |
| Wordline Pump Voltage (VPP) | — | 2.5 V (+0.25/-0.125 V) |
| Speed Bins (per datasheet) | — | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) |
| Bank Groups | — | 4 (BG0-BG1) |
| Banks | — | 16 (4 bank groups x 4 banks) |
| Row Address | — | A0-A16 (17 bits) |
| Technology | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (RoHS Compliant per datasheet) |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CL for PBC speed bin] |
| Geardown Mode Note | — | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled |